| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which has a low forward voltage, emits light uniformly over the entire light emission region, and has excellent reliability as a semiconductor light-emitting element, which is so structured that a translucent electrode containing Pd is formed on a light emission translucent surface and light is guided out through the translucent electrode. SOLUTION: This semiconductor light-emitting element has at least a 1st conductivity-type gallium nitride compound semiconductor layer and a 2nd conductivity-type gallium nitride compound semiconductor layer on a substrate. The element is further equipped with the translucent electrode which is formed on the surface of the 2nd conductivity-type gallium nitride compound semiconductor layer, a conductivity-type film which continuously covers a region adjacent to the circumference of the flank of the translucent electrode on the top and flank of the translucent electrode and the surface of the 2nd conductivity-type gallium nitride compound semiconductor layer, and a pad electrode which is formed on the surface of the 2nd conductivity-type gallium compound semiconductor layer on the conductivity-type film respectively. |
