| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which comprises an etching process which is unavoidable of the deterioration of an etching selection ratio of each oxide film, when the method of manufacturing the semiconductor device is accompanied by the formation of two kinds of oxide films or more, having etching characteristics different from each other. SOLUTION: The method of manufacturing a semiconductor device is performed by making a stacked film sidewall comprises a first oxide film, such as an NSG film or a TEOS film, and a second oxide film, such as a BPSG film or a PSG film, is formed on the side surface of a gate electrode. After that, after the laminated film sidewall has been used as an injection mask for source and drain formation of a MIS transistor, the sidewall is subjected to wet etching with a water solution containing a hydrofluoric acid and an acetic acid or an isopropyl alcohol, when the second oxide film is selectively removed. Hereby, the etching selection ratio of each oxide film is increased, and only the upper second oxide film is removed.
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