| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device securing a zero cross operation, even if light illuminance is increased. SOLUTION: In the semiconductor device, n-type drain regions 7 and 7' arranged inside are formed to surround n-type source regions 8 and 8'. Gate electrodes 12 and 12' are formed to extend between the n-type drain regions 7 and 7' and the n-type source regions 8 and 8'.
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