发明名称 ION BEAM WORKING DEVICE AND METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To suppress drastic changes in the potential on a working object surface at opening and closing of a shutter plate. SOLUTION: When irradiating a substrate 38 with an ion beam IB from an ion source 10 and neutralizing the ion beam IB, by using neutralizing electrons e<-> generated by a microwave neutralizer 14, the substrate is shaded with the shutter plate 62 prior to and after milling the substrate 38, the voltage of a power source 34 is lowered at opening and closing of the shutter plate 62, the irradiated quantity of the ion beam IB is limited and the charge-up of the surface of the substrate 38 is suppressed.
申请公布号 JP2002353172(A) 申请公布日期 2002.12.06
申请号 JP20010153690 申请日期 2001.05.23
申请人 HITACHI LTD 发明人 KIMURA YOSHIHIRO;HISAMOTO HIROSHI;SUGIURA TAKAHARU;NARITA YUSUKE
分类号 G21K5/04;C23C14/46;H01J37/305;H01J37/317;H01L21/302;H01L21/3065;(IPC1-7):H01L21/302 主分类号 G21K5/04
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