| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor device is provided to be capable of preventing the generation of etching residuals due to slight etching and the damage of a junction region due to excessive etching. CONSTITUTION: An insulating layer(13) is formed on a semiconductor substrate(11) having a junction region(12). After forming a mask pattern on the insulating layer, a dry etching process is carried out at the insulating layer by using the mask pattern for forming a contact hole. At this time, the insulating layer remains at the bottom portion of the contact hole. After implanting nitrogen ions into the resultant structure, the mask pattern is removed. A spacer oxide layer(15) is deposited on the entire surface of the resultant structure. At this time, the implanted nitrogen ions are activated. The contact hole is completed by removing the spacer oxide layer and remaining insulating layer. At this time, the junction region is protected by the remaining insulating layer.
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