METHOD FOR MANUFACTURING MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a memory device is provided to prevent a blow-up generated at sidewalls of ONO(Oxide/Nitride/Oxide) layers by growing an oxide spacer for recovering at hydrogen-rich atmosphere in a short time. CONSTITUTION: A gate pattern stacked sequentially a gate oxide(33), a floating gate(35), an ONO layer(37) and a control gate(39) is formed on a semiconductor substrate(31). An oxide spacer(41) for recovering is grown at both sidewalls of the gate pattern by thermal oxidation of the gate pattern. At this time, the thermal oxidation processing is performed at hydrogen-rich atmosphere in a short time by using a low pressure RTP(Rapid Thermal Processing) equipment, thereby preventing a blow-up generated at sidewalls of the ONO layer(37).