| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where mechanical strength of the wiring layer is high and a total dielectric constant can be decreased sufficiently, and to provide its manufacturing method. SOLUTION: This semiconductor device comprises a semiconductor substrate 101, a multilayer wiring of two layers or more which consists of a metal line formed on the semiconductor substrate 101 and an insulating film formed on the metal line, a metal plug 106 that is formed in the insulating film and connects the metal lines adjacent to the upper and lower sides of the insulating film, the insulating film 110 formed in the upper part of the multilayer wiring, an opening 111 formed so as to penetrate through the insulating film 110 in a top and bottom direction, and an air space 112 formed on the semiconductor substrate 101 so as to continue through the opening 111.
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