| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce SiO2 in a low dielectric constant layer and chlorine in a gate insulation film, and thereby, can control the increase of a capacitance and the occurrence of a leakage current in a gate insulation film, and to provide its manufacturing method. SOLUTION: In a semiconductor device in which element separation regions, a gate insulation film, and gate electrodes are sequentially formed on a silicon single crystal substrate, the gate insulation film is formed by a chemical vapor deposition method (a CVD method) using a solution containing organic metals and reducing solvents. Specially, the gate insulation film consists of one or more among TiO2 , HfO2 , ZrO2 , Al2 O3 , Ta2 O5 , Sc2 O3 , Y2 O3 , and Ln2 O3 (Ln is a rare earth element), and SiO2 does not exist substantially between the silicon single crystal substrate and the gate insulation film.
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