| 摘要 |
PROBLEM TO BE SOLVED: To provide the structure of a process chamber of an equipment for fabricating a semiconductor and the equipment for fabricating the semiconductor, in which the uniformity of the distribution or flow of gas is improved. SOLUTION: The process chamber 2 of a thermal CVD equipment 1 has a chamber main body 19 comprising a chamber body 3, a rid 4 and a shower head 9 and a ring exhaust path forming member 13 provided on the side wall of the chamber body 3. A plurality of through hole 14 connected to the gas exhaust outlet 3a of the chamber body 3 is formed in the exhaust path forming member 13 at even intervals. A ring-shaped minute clearance is formed between the upper face 13a of the exhaust path forming member 13 and the surface of the edge of a shower head 9. A ring-shaped protrusion 15 is fixed on the upper face of the exhaust path forming member 13 by welding or the like. The ring-shaped protrusion 15 extends to the outside of the radial direction of the chamber body 3 to the inner wall face of the rid 4.
|
