| 摘要 |
PROBLEM TO BE SOLVED: To provide a system for producing a semiconductor substrate in which metallic impurities mixed in an epitaxial semiconductor substrate can be grasped at the time of growing an epitaxial layer, and a method for fabricating a semiconductor device using that semiconductor substrate. SOLUTION: The system 1 for producing a semiconductor substrate comprises a CVD furnace 2 for growing an epitaxial layer on a semiconductor substrate (wafer) W, an exhaust gas bubbler 3 branched from the way of piping 23 for discharging exhaust gas, and an analyzer 4 for analyzing metals in the exhaust gas captured by pure water 33 in the bubbler 3. Exhaust gas from the CVD furnace 2 is bubbled into the pure water 33 in the bubbler 3, metals contained in the exhaust gas is captured as an analytic sample and the density of metals in the exhaust gas is analyzed thus determining whether a semiconductor substrate having an epitaxial layer can be used or not.
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