发明名称 VIRTUAL STATIC RANDOM ACCESS MEMORY DEVICE AND ITS DRIVING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a virtual static random access memory device having a function for refreshing data of a memory cell by using a dynamic memory cell and its driving method. SOLUTION: This device is provided with a memory cell array 34, an input/ output driving section 20 performing input/output of data, register sections 26, 28 storing the prescribed internal data, a refresh control section 32 controlling refresh operation, and a state control section 30 in which when recording operation for the memory cell array is executed for a longer time than a refresh period and the prescribed time elapses from start of recording operation, refresh operation for a memory cell array can be executed by the refresh control section after input data from the outside can be stored by the register section, after that additional recording operation for the memory cell array can be executed using input data stored in the register section by the input/output driving section.
申请公布号 JP2002352578(A) 申请公布日期 2002.12.06
申请号 JP20010392709 申请日期 2001.12.25
申请人 HYNIX SEMICONDUCTOR INC 发明人 KIM SAENG HWAN
分类号 G11C11/403;G11C11/406;G11C11/407;G11C11/4076;G11C11/408;G11C11/409;(IPC1-7):G11C11/403 主分类号 G11C11/403
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