| 摘要 |
An object is to improve the element characteristic of a luminescent element. In an anode 122 connected to a drain interconnection 120 of a current-controlling TFT 202, slits are made. A transparent hole generating layer 124 is formed on the anode 122. Since the slits are made, luminescence can be taken out even if a light-shielding metal film is used as the anode 122. Since the hole generating layer 124 has semiconductivity, an electric field applied from the anode 122 to an organic compound layer 125 can be made uniform. Since holes are generated in the hole generating layer 124, the density of carriers injected from the anode 122 can be made high. In this way, a luminescent element having a low driving voltage and a high brightness can be manufactured.
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