发明名称 Method of and apparatus for chemical-mechanical polishing
摘要 During a CMP operation, vibration-caused variations in the forces holding a wafer against a polishing pad, and/or relatively moving the pad and the wafer are measured and the standard deviation thereof is used to minimize or eliminate the deleterious effects of the vibrations.
申请公布号 US2002182978(A1) 申请公布日期 2002.12.05
申请号 US20010871236 申请日期 2001.05.31
申请人 MOMENTUM TECHNICAL CONSULTING, INC. 发明人 LUKNER RALF;HEHMEYER OWEN
分类号 B24B37/04;B24B49/16;(IPC1-7):B24B49/00 主分类号 B24B37/04
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