发明名称 |
Capacitor and method for fabricating the same |
摘要 |
A capacitor includes lower electrode, capacitive insulating film, upper electrode and passivation film that are formed in this order on a substrate. The capacitive insulating film is made of an insulating metal oxide, the metal oxide being a ferroelectric or a dielectric with a high relative dielectric constant. At least one contact hole is formed in the passivation film to connect the lower electrode to an interconnect for the lower electrode or the upper electrode to an interconnect for the upper electrode. The opening area of the contact hole is equal to or smaller than 5 mum2.
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申请公布号 |
US2002182802(A1) |
申请公布日期 |
2002.12.05 |
申请号 |
US20020194323 |
申请日期 |
2002.07.15 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
TANAKA KEISUKE;NAGANO YOSHIHISA;ITO TOYOJI;MIKAWA TAKUMI |
分类号 |
H01L21/02;H01L21/306;H01L21/311;H01L21/3213;H01L21/768;(IPC1-7):H01L21/00;H01L21/824;H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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