发明名称 |
Method for manufacturing transistor |
摘要 |
A method of manufacturing a transistor. The method comprising the steps of providing a substrate. The substrate comprises a gate oxide layer formed thereon, a polysilicon layer formed on the gate oxide layer, an offset spacer formed on a sidewall of the polysilicon layer and the gate oxide layer and a source/drain formed in the substrate. A conformal dielectric layer is formed over the polysilicon layer, the offset spacer and the source/drain. A spacer is formed on the sidewall of a portion of the conformal dielectric layer over the offset spacer. A portion of the conformal dielectric layer is removed to expose the polysilicon layer and the source/drain. A selective epitaxial growth process is performed to form an epitaxial layer on the polysilicon layer and the source/drain. A portion of the epitaxial layer on the polysilicon layer, the polysilicon layer and the gate oxide layer together form a T-type gate structure.
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申请公布号 |
US2002182799(A1) |
申请公布日期 |
2002.12.05 |
申请号 |
US20010880519 |
申请日期 |
2001.06.12 |
申请人 |
HUANG KUO-TAI;CHENG ELLEN |
发明人 |
HUANG KUO-TAI;CHENG ELLEN |
分类号 |
H01L21/28;H01L21/336;H01L29/423;H01L29/78;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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