发明名称 DUAL CELL READING AND WRITING TECHNIQUE
摘要 The cells of a memory cell array are programmed in a pair wise manner. The pairs are separated by at least one memory cell, reducing the possibility of interference between the pairs during programming. The memory cells are programmed individually by applying a relatively high voltage to one of the bit lines of each cell regardless whether the cells are to be programmed or not, while applying a lower voltage to the second bit lines, depending on whether the cells are to be programmed or not. This programming voltage assignment enhances the speed of programming. Furthermore, the pair wise programming scheme applies the necessary high voltages only half as often as in previous schemes to program all the cells of the array, increasing the lifetime of the memory system.
申请公布号 WO02097820(A2) 申请公布日期 2002.12.05
申请号 WO2002US16835 申请日期 2002.05.29
申请人 SANDISK CORPORATION 发明人 CERNEA, RAUL-ADRIAN
分类号 G11C16/04;G11C16/02;G11C16/10;G11C16/26;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C16/04
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