发明名称 |
Semiconductor device and method of fabricating a semiconductor device |
摘要 |
A semiconductor device includes a substrate of a first conductive type, and a well region of an opposite second conductive type is formed in the substrate. A first impurity region of the first conductive type extends to a first depth within the well region, and a second impurity region of the first conductive type is spaced from the first impurity region to define a channel region therebetween and extends to a second depth within the well region. Preferably, the second depth is greater than the first depth. A gate electrode is located over the channel region, and a silicide layer is formed at a third depth within the first impurity region. The third depth is less than the first depth, and a difference between the first depth and the third depth is less than or equal to a difference at which a leakage current from the silicide layer to the well region is sufficient to electrically bias the well region through the silicide layer.
|
申请公布号 |
US2002179979(A1) |
申请公布日期 |
2002.12.05 |
申请号 |
US20020194300 |
申请日期 |
2002.07.15 |
申请人 |
CHO KANG-SIK;CHO HOO-SEUNG;KIM GYU-CHUL;PARK YONG;KIM HAN-SOO |
发明人 |
CHO KANG-SIK;CHO HOO-SEUNG;KIM GYU-CHUL;PARK YONG;KIM HAN-SOO |
分类号 |
H01L21/285;H01L21/336;H01L21/8234;(IPC1-7):H01L31/113 |
主分类号 |
H01L21/285 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|