| 摘要 |
A semiconductor device comprises a first insulating layer formed on a substrate; a resistor layer formed on the first insulating layer and having a prescribed electrical resistance; a second insulating layer formed on the resistor layer; a plurality of wirings electrically connected, at positions spaced apart from each other on the resistor layer, to the resistor layer through holes formed in the second insulating layer. Further the semiconductor device comprises a heat storage layer formed in the vicinity of the resistor layer for storing heat generated when a current flows in the resistor layer. Hence, even if a large current such as a surge current flows in the resistor layer, heat generated in the resistor layer can be stored in the heat storage layer provided in the vicinity of the resistor layer. Therefore, a stable and reliable semiconductor device free of the breakdown of the resistor layer can be provided.
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