发明名称 REPAIR CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A repair circuit of a semiconductor memory device is provided to prevent a malfunction due to residues generated from a cutting process of a fuse by installing a switching element between an element for providing repair data and a latch. CONSTITUTION: An operating switch portion(100) is formed with an NMOS transistor. The operating switch portion(100) is turned on when an operating signal is received under a low voltage. An address input portion(300) is connected between the operating switch portion(100) and an address sense signal through a fuse portion(200). The address input portion(300) is turned on by an address signal of a defective circuit. The address input portion(300) is formed with a PMOS transistor for detecting a cutting state of the fuse portion(200). An output portion(400) outputs repair data. A switching element(420) provides a supply voltage to a front end portion of an output portion in response to the address sense signal and intercepts an input signal.
申请公布号 KR20020090600(A) 申请公布日期 2002.12.05
申请号 KR20010029502 申请日期 2001.05.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, HYEON U
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
代理机构 代理人
主权项
地址