摘要 |
PURPOSE: A repair circuit of a semiconductor memory device is provided to prevent a malfunction due to residues generated from a cutting process of a fuse by installing a switching element between an element for providing repair data and a latch. CONSTITUTION: An operating switch portion(100) is formed with an NMOS transistor. The operating switch portion(100) is turned on when an operating signal is received under a low voltage. An address input portion(300) is connected between the operating switch portion(100) and an address sense signal through a fuse portion(200). The address input portion(300) is turned on by an address signal of a defective circuit. The address input portion(300) is formed with a PMOS transistor for detecting a cutting state of the fuse portion(200). An output portion(400) outputs repair data. A switching element(420) provides a supply voltage to a front end portion of an output portion in response to the address sense signal and intercepts an input signal.
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