发明名称 |
Enhanced fuse configurations for low-voltage flash memories |
摘要 |
An enhanced fuse circuit is discussed that advances redundancy techniques in integrated circuits. The enhanced fuse circuit uses a single nonvolatile fuse and a latch that is coupled at a desired time. One embodiment of the invention discusses a fuse circuit that includes a volatile latch and a nonvolatile fuse. The nonvolatile fuse adapts to operate with a voltage supply greater than about 1.65 volts. The voltage supply is boosted at a desired time to a predetermined level and for a predetermined duration so that the nonvolatile fuse transfers its data to the volatile latch.
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申请公布号 |
US2002181309(A1) |
申请公布日期 |
2002.12.05 |
申请号 |
US20020196602 |
申请日期 |
2002.07.15 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SANTIN GIOVANNI |
分类号 |
G11C16/06;G11C29/00;G11C29/04;H01L21/82;(IPC1-7):G11C5/00 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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