发明名称 Enhanced fuse configurations for low-voltage flash memories
摘要 An enhanced fuse circuit is discussed that advances redundancy techniques in integrated circuits. The enhanced fuse circuit uses a single nonvolatile fuse and a latch that is coupled at a desired time. One embodiment of the invention discusses a fuse circuit that includes a volatile latch and a nonvolatile fuse. The nonvolatile fuse adapts to operate with a voltage supply greater than about 1.65 volts. The voltage supply is boosted at a desired time to a predetermined level and for a predetermined duration so that the nonvolatile fuse transfers its data to the volatile latch.
申请公布号 US2002181309(A1) 申请公布日期 2002.12.05
申请号 US20020196602 申请日期 2002.07.15
申请人 MICRON TECHNOLOGY, INC. 发明人 SANTIN GIOVANNI
分类号 G11C16/06;G11C29/00;G11C29/04;H01L21/82;(IPC1-7):G11C5/00 主分类号 G11C16/06
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