发明名称 |
Photoacid generator containing two kinds of sulfonium salt compound, chemically amplified resist containing the same and pattern transfer method |
摘要 |
A chemically amplified photo-resist contains a photoacid generator for changing the solubility of resin after exposure to 130-220 nanometer wavelength light, and the photoacid generator contains two kinds of sulfonium salt compound expressed by general formulae [1] and [2] so that the chemically amplified photo-resist is improved in resolution, sensitivity and smoothness on side surfaces of a transferred pattern.
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申请公布号 |
US2002182535(A1) |
申请公布日期 |
2002.12.05 |
申请号 |
US20010987424 |
申请日期 |
2001.11.14 |
申请人 |
MAEDA KATSUMI;IWASA SHIGEYUKI;NAKANO KAICHIRO;HASEGAWA ETSUO |
发明人 |
MAEDA KATSUMI;IWASA SHIGEYUKI;NAKANO KAICHIRO;HASEGAWA ETSUO |
分类号 |
C07C381/12;C07D311/22;C07D333/46;C07D335/02;C08K5/36;C08L101/14;C09K3/00;G03F7/004;G03F7/038;G03F7/039;H01L21/027;(IPC1-7):G03F7/038;G03F7/40;C07D311/76 |
主分类号 |
C07C381/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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