发明名称 Semiconductor device and a method of manufacturing the same
摘要 Two memory chips mounted over a base substrate have the same external size and a flash memory of the same memory capacity formed thereon. These memory chips are mounted over the base substrate with one of them being overlapped with the upper portion of the other one, and they are stacked with their faces being turned in the same direction. The bonding pads BP of one of the memory chips are disposed in the vicinity of the bonding pads BP of the other memory chip. In addition, the upper memory chip is stacked over the lower memory chip in such a way that the upper memory chip is slid in a direction (X direction) parallel to the one side of the lower memory chip and in a direction (Y direction) perpendicular thereto in order to prevent partial overlapping of it with the bonding pads BP of the lower memory chip.
申请公布号 US2002180060(A1) 申请公布日期 2002.12.05
申请号 US20020194224 申请日期 2002.07.15
申请人 MASUDA MASACHIKA;USAMI TOSHIHIKO 发明人 MASUDA MASACHIKA;USAMI TOSHIHIKO
分类号 H01L25/18;H01L21/60;H01L23/31;H01L25/065;H01L25/07;(IPC1-7):H01L29/40 主分类号 H01L25/18
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