METHOD OF ETCHING DIELECTRIC MATERIALS

摘要

The invention relates to a method for dry etching of a silicon oxide substrate. The method comprises the steps of generating a non-etch plasma from an inert gas, subjecting the silicon oxide substrate to the resulting plasma to bring the silicon oxide to a stable elevated temperature, generating an etch plasma from a reactive gas or gas mixture containing a reactive gas, and subjecting the silicon oxide substrate, which is at the stable elevated temperature, to the resulting etch plasma to effect etching of the substrate. By subjecting the silicon oxide sample to an inert gas plasma prior to the etch step, and thus stabilizing the temperature of the silicon oxide, it has been found that a dramatic improvement in the verticality of etched side walls can be obtained.