| 摘要 |
<p>An SOI substrate which has an SOI structure having an insulation layer and a surface single crystal silicon layer formed in that order on a single crystal wafer, the SOI substrate being free from pitting in the SOI layer, capable of being produced with a high productivity at low costs, and having an excellent gettering capability, characterized in that the SOI substrate contains nitrogen and carbon, nitrogen content being up to 1x1016 atoms/cm3 and carbon content being up to 1x1018 atoms/cm3.</p> |
