| 摘要 |
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. A portion of the accommodating buffer layer may be used to form a dielectric for a dielectric resonance. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The use of monocrystalline dielectric material as an overlying layer is disclosed to facilitate the fabrication of on chip high frequency communications devices such as dielectric resonators with direct interface to compound semiconductor material in the integrated circuit. The provision of on chip resonators through the use of dielectric material in the form of a monocrystalline layer facilitates high frequency communications circuits on a single integrated circuit that may include materials such as thin film crystalline materials used as resonators including dielectric resonators.
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