摘要 |
An electronic device is provided using wiring comprising aluminum to prevent hillock or whisker from generating, wherein the wiring contains oxygen atoms at a concentration of 8x1018 atoms.cm-3 or less, carbon atoms at a concentration of 5x1018 atoms.cm-3 or less, and nitrogen atoms at a concentration of 7x1017 atoms.cm-3 or less; furthermore, a silicon nitride film is formed on the aluminum gate, and an anodic oxide film is formed on the side planes thereof.
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