发明名称 |
Method of forming an integrated circuit device using dummy features and structure thereof |
摘要 |
A method for forming an integrated circuit device having dummy features and the resulting structure are disclosed. One embodiment comprises a first active feature separated from a substantially smaller second active feature by a dummy-available region void of active features. Within the dummy-available region and in close proximity to the second active feature exists a dummy feature.
|
申请公布号 |
US2002179902(A1) |
申请公布日期 |
2002.12.05 |
申请号 |
US20010873810 |
申请日期 |
2001.06.04 |
申请人 |
TRAVIS EDWARD O.;CHHEDA SEJAL N.;TIAN RUIQI |
发明人 |
TRAVIS EDWARD O.;CHHEDA SEJAL N.;TIAN RUIQI |
分类号 |
H01L21/822;H01L21/3105;H01L21/762;H01L21/82;H01L27/04;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/822 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|