发明名称 Method of forming an integrated circuit device using dummy features and structure thereof
摘要 A method for forming an integrated circuit device having dummy features and the resulting structure are disclosed. One embodiment comprises a first active feature separated from a substantially smaller second active feature by a dummy-available region void of active features. Within the dummy-available region and in close proximity to the second active feature exists a dummy feature.
申请公布号 US2002179902(A1) 申请公布日期 2002.12.05
申请号 US20010873810 申请日期 2001.06.04
申请人 TRAVIS EDWARD O.;CHHEDA SEJAL N.;TIAN RUIQI 发明人 TRAVIS EDWARD O.;CHHEDA SEJAL N.;TIAN RUIQI
分类号 H01L21/822;H01L21/3105;H01L21/762;H01L21/82;H01L27/04;(IPC1-7):H01L23/58 主分类号 H01L21/822
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