PROCESS FOR PREPARING CU DAMASCENE INTERCONNECTION

摘要

The present invention discloses a technique of enhancing adhesion between a passivation layer and a low-K dielectric layer, in which a SiO2 layer as the passivation formed on the low-K dielectric layer is subjected to N2O plasma annealing. This technique is useful in improving the yield of a process for preparing Cu damascene interconnection.