| 摘要 |
When a rise of an input signal Vin is applied to an input terminal, an output of a two-input NAND circuit changes to the "H" level, and an output MOS transistor is controlled to turn off. In this state, a sense MOS transistor is simultaneously controlled to turn off, the electric potential of a drain of the sense MOS transistor is pulled down, an output of a two-input NOR circuit changes to the "H" level, and an output MOS transistor is controlled to turn on. When a fall of the input signal Vin is applied to the input terminal, the output of two-input NOR circuit changes to the "L" level, and the output MOS transistor is controlled to turn off. In this state, a sense MOS transistor is simultaneously controlled to turn off, the electric potential of a drain of the sense MOS transistor is pulled up, and the output of two-input NAND circuit changes to the "L" level, and the output MOS transistor is controlled to turn on.
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