| 摘要 |
A sapphire single crystal body useful as a substrate, of thin film growth, for semiconductor or the like electronic parts or component parts, a single crystal sapphire substrate, and a method for working the same are disclosed. Considering that the cleavage plane of the plane R of the sapphire single crystal body has a smooth plane high in surface precision and is easier to cleave, for an easier dividing operation, by cleaving, of the substrate after the formation of the element such as semiconductor element, functional element, a reference plane substantially parallel or vertical to the plane R is provided on the periphery of the substrate, so as to make an index for controlling the plane R in the cleavage division. Forming a linear crack parallel or vertical to the reference plane of the substrate provides a starting point to develop the crack in the thickness direction. In a laser diode of the invention, the single crystal sapphire substrate which forms the semiconductor multilayer is cleaved, divided along the plane R to form the cleaved plane connected with the semiconductor multilayer and the substrate. Since the cleaved plane of the semiconductor muitilayer is an extremely smooth plane, the cleaved plane can be used for the reflection plane for laser resonator use of the semiconductor multilayer. <IMAGE> |
