| 摘要 |
<p>A method of fabricating a semiconductor wafer, comprising the steps of placing a silicon single crystal wafer (W) in a counter bore (11) provided in a susceptor (10), and heat treating the wafer (W) to fabricate a semiconductor wafer, wherein a contact ratio between the counter bore (11) and the wafer (W) is at least 0.1% and up to 1.1%.</p> |
