发明名称 |
Channel write/erase flash memory cell and its manufacturing method |
摘要 |
A pseudo-dynamic operating method and a flash memory cell capable of performing this operating method are disclosed. A parasitic capacitor near the drain terminal of the flash memory can be charged in few microseconds during operation. Interference generated between the floating gate and the source is avoided by using a first oxide layer which is thicker at the interface between floating gate and source and thinner near central part under stacked gate.
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申请公布号 |
US2002181287(A1) |
申请公布日期 |
2002.12.05 |
申请号 |
US20020064365 |
申请日期 |
2002.07.07 |
申请人 |
HSU CHING-HSIANG;YANG CHING-SUNG |
发明人 |
HSU CHING-HSIANG;YANG CHING-SUNG |
分类号 |
H01L21/8247;G11C14/00;G11C16/04;H01L21/336;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/04 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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