| 摘要 |
The present Invention provides a method of photo-processing of materials in the presence of a reactive fluid which involves using light selected on the basis that the material has a long absorption for the wavelength of emission of the light. The present invention teaches photo-processing of semiconductors such as silicon using infrared radiation and is very advantageous since, in those materials to be processed having a very long absorption for the wavelength of emission of the light, one obtains volume absorption deep under the surface of the illuminated region so that the material under the surface is heated. The material is irradiated with the light beam in the presence of a reactive gas, the light beam having a wavelength in an infrared portion of the electromagnetic spectrum wherein the irradiated selected region of the solid is heated and reacts with the reactive gas to remove atoms or molecules of the material from the irradiated region.
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