| 摘要 |
1,106,737. Semi-conductor devices. WESTINGHOUSE BRAKE & SIGNAL CO. Ltd. 17 March, 1967 [22 April, 1966], No. 17709/66. Heading H1K. The emitter zone of a semi-conductor device is formed by alloying to a silicon body 1 a contact layer 2 which includes the emitter dopant. The layer 2, and hence the emitter zone, includes apertures 3 into which are alloyed elements 6 forming ohmic contact with the silicon body 1. Shorting layers 7 are then deposited to ohmically interconnect the body 1, and the contact layer 2, via the elements 6. The elements 6 may completely fill the apertures 3, thus connecting directly with the layer 2, the shorting layers 7 also being provided to improve the connection. The layer 2 may be an Au/Sb alloy, alloyed in a hydrogen atmosphere. The elements 6 may be of Al or an Au/B alloy and may form, during alloying, a P+ region in the silicon body. The shorting layers 7 may be of Au or Al vapour deposited using a jig or wax mask. The layers 7 may alternatively be applied by electroless plating, a Ni-plated coating first being deposited, followed by an Au-plated coating. The device shown is an NPNP structure, the silicon body including PNP layers. A gate electrode 5 is applied to the upper P layer through a further aperture in the layer 2 and N-type emitter zone. |
