| 摘要 |
The invention relates to a TMR layer system consisting of a first ferromagnetic electrode layer (11), a dielectric barrier layer (10) and a second ferromagnetic layer (12) which are placed on top of each other in the above-mentioned sequence or which are arranged horizontally next to each other. The electric resistance of the layer system (10,11,12) depends upon the relative magnetic polarization direction of the first and second ferromagnetic electrode layer. The inventive TMR layer system is characterized in that at least one of the ferromagnetic electrode layers (11,12) has a voltage-dependent state charge carrier density, whereby the electric current voltage characteristic of the TMR layer system has diode behavior, or the dielectric barrier layer is embodied in such a way that it has a strongly asymmetrical tunnel behavior.
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