| 发明名称 |
A SEMICONDUCTOR DEVICE WITH BIAS CONTACT |
| 摘要 |
A semiconductor device (30) having a bias contact (32) deposited on a substrate, the bias contact (32) having an active portion (14) and an edge portion (46), the work functions of the active portion (44) and the edge portion (46) being different and such thatover a biasing voltage range, a region under the active portion (44) is switched on and a region under the edge portion (46) is switched off. |
| 申请公布号 |
WO0250914(A3) |
申请公布日期 |
2002.12.05 |
| 申请号 |
WO2001IB02493 |
申请日期 |
2001.12.17 |
| 申请人 |
EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH;SNOEYS, WALTER, JAN, MARIA |
发明人 |
SNOEYS, WALTER, JAN, MARIA |
| 分类号 |
H01L21/28;H01L21/761;H01L21/8238;H01L27/06;H01L29/10;H01L29/417;H01L29/423;H01L29/49;H01L29/861 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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