发明名称 SEMICONDUCTOR LASER DRIVING CIRCUIT
摘要 A resistor is connected in series with a vertical cavity surface emitting laser, and DC bias electric current is supplied thereto from a DC bias electric current supplying circuit by way of an inductor. Input data is inputted from a differential input line to a voltage amplifier by way of a PECL input buffer, for voltage amplification. The amplified signal is attenuated by an attenuator, transferred to a transfer line by way of a capacitor for AC coupling, and applied to the series resistance and the vertical cavity surface emitting laser. The voltage amplifier has a peak in its frequency characteristics and is structured such that the gain, the frequency band, and the peaking characteristics can be adjusted.
申请公布号 US2002181520(A1) 申请公布日期 2002.12.05
申请号 US19990431281 申请日期 1999.11.01
申请人 IGUCHI AKIYOSHI;TOBITA KENYO;UNAMI YOSHIHARU 发明人 IGUCHI AKIYOSHI;TOBITA KENYO;UNAMI YOSHIHARU
分类号 H04B10/04;H01S5/00;H01S5/042;H01S5/183;H04B10/06;H04B10/14;H04B10/26;H04B10/28;(IPC1-7):H01S3/00 主分类号 H04B10/04
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