发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
There is disclosed a semiconductor device in which a device isolating insulating film is formed in a periphery of a device region of a semiconductor silicon substrate device region. A side wall insulating film formed of a silicon nitride film is formed to cover the periphery of a channel region on the silicon substrate. A Ta2O5 film, and a metal gate electrode are formed inside a trench whose side wall is formed of the side wall insulating film. An interlayer insulating film is formed on the device isolating insulating film. A Schottky source/drain formed of silicide is formed on the silicon substrate in a bottom portion of the trench whose side wall is formed of the side wall insulating film and interlayer insulating film. A source/drain electrode is formed on the Schottky source/drain.
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申请公布号 |
US2002179980(A1) |
申请公布日期 |
2002.12.05 |
申请号 |
US20020205203 |
申请日期 |
2002.07.26 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAGISHITA ATSUSHI;MATSUO KOUJI |
分类号 |
H01L21/283;H01L21/28;H01L21/335;H01L21/336;H01L21/8238;H01L27/08;H01L27/092;H01L27/095;H01L29/417;H01L29/45;H01L29/47;H01L29/49;H01L29/51;H01L29/78;H01L29/786;H01L29/872;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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