MASKING TECHNIQUE FOR PRODUCING SEMICONDUCTOR COMPONENTS, IN PARTICULAR A BURIED HETEROSTRUCTURE (BH) LASER DIODE

摘要

The invention relates to a masking technique for producing a structure for semiconductor components, in particular BH laser diodes, according to which mask material is applied to a sample in a masking step. The technique is characterised in that the etching rate during an etching step (3) is selected in accordance with the composition and/or the nature of the mask material, so that the mask (40) is at least partially dissolved during the etching step (3). This enables the mask to be removed from the semiconductor material and additional layers to be applied in-situ in a simple manner during the production of semiconductor components.