SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device is provided to improve a cutoff characteristic of a select transistor and to embody a select transistor and a memory cell transistor that have different dependency of a critical voltage upon the length of a channel. CONSTITUTION: Source and drain regions include the first impurities of the first conductivity type. A channel region includes the second impurities of the second conductivity type. A gate insulation film(6) includes the second impurities in a region thereof located immediately above at least a portion of the channel region. A charge storage layer(14) is formed on the gate insulation film. A control gate electrode(17) is provided on the charge storage layer. The control gate electrode is formed on the charge storage layer and is electrically connected to the charge storage layer by a connection portion provided on a part of the charge storage layer, which is located immediately above at least a part of the region of the gate insulation film including the second impurities.