发明名称 |
Nonvolatile semiconductor memory device having selective multiple-speed operation mode |
摘要 |
Disclosed is a nonvolatile semiconductor memory device having selective multiple-speed operation modes selected by simple options. The nonvolatile semiconductor memory device includes a memory cell array formed of a plurality of cell array blocks each having a plurality of cell strings, the cell string formed with floating gate memory cell transistors such that their control gates each are respectively connected to a plurality of word lines, and its drain-source channels are series connected to each other between a string select transistor and a ground select transistor. The memory device also includes a multiple-speed mode option part for generating a multiple-speed option signal, and an addressing circuit for selecting a page size and block size of the memory cell array different from one another in response to a state of the multiple-speed option signal.
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申请公布号 |
US2002181315(A1) |
申请公布日期 |
2002.12.05 |
申请号 |
US20020150387 |
申请日期 |
2002.05.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JUNE;IM HEUNG-SOO;CHOI SUN-MI |
分类号 |
G11C16/02;G11C8/12;G11C16/04;G11C16/06;G11C16/08;(IPC1-7):G11C8/00 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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