发明名称 |
Semiconductor film, semiconductor device and method for manufacturing same |
摘要 |
Concerning an art related to a manufacturing method for a semiconductor device having an integrated circuit using thin film transistors on a substrate, a problem is to provide a condition for forming an amorphous silicon film having distortion. In the deposition of an amorphous silicon film using a sputter method, a condition is provided with a frequency of 15 to 25 kHz and a deposition power of 0.5 to 3 kW. This can sufficiently contain Ar at 10x1020/cm3 or more in an amorphous silicon film, thus making possible to form an amorphous silicon film having distortion.
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申请公布号 |
US2002182783(A1) |
申请公布日期 |
2002.12.05 |
申请号 |
US20020157843 |
申请日期 |
2002.05.31 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TAKAYAMA TORU;AKIMOTO KENGO |
分类号 |
H01L21/203;H01L21/336;H01L29/786;(IPC1-7):H01L21/339;H01L21/00;H01L21/84 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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