Method for generating internal clock of semiconductor memory device and circuit thereof

摘要

The invention relates to a semiconductor memory device and a method for generating an internal clock, the circuit of the semiconductor device including: a receiver for receiving an external clock; a delay compensation circuit for receiving an output of the receiver and delaying it by as much as the compensation delay time and control delay time subtracted out of a cycle of the external clock; an external control delay part for delaying an output of the delay compensation circuit by as much as the control delay time and unit increase/decrease delay time in response to an external control code; and an internal clock driver for driving an output of the external control delay part and generating an internal clock centered to externally applied data, thereby performing an accurate timing control to an external clock without loss of performance.