| 摘要 |
A heterojunction bipolar transistor (20, 60) is provided with a silicon (Si) base region (34, 74) that forms a semiconductor junction with a multilayer emitter (38) having a thin gallium arsenide (GaAs) emitter layer (36, 72) proximate the base region (34, 74) and a distal gallium phosphide (GaP) emitter layer (40, 66). The GaAs emitter layer (36, 72) is sufficiently thin, preferably less than 200 Å, so as to be coherently strained. In one embodiment, the GaP emitter layer includes a doped region (70) that serves as the emitter and an undoped region (68) on which the intrinsic portion of the transistor (60) is formed.
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