Semiconductor light-emitting devices

摘要

The present invention provides a semiconductor light-emitting device including a first clad layer (103) comprising a first conductive type of AlGaAsP compound, a second clad layer (104) that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 mu m, an active layer (105) that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer (106) that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 mu m, and a fourth clad layer (107) that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or Gap and has a thickness of 1 mu m to 100 mu m. <IMAGE>