发明名称 MASKING METHOD, METHOD FOR FORMING PATTERN ON THIN FILM, AND METHOD OF RUNNING MASKING PROCESS
摘要 PROBLEM TO BE SOLVED: To provide an improved method for masking a substrate to be etched. SOLUTION: This method for forming a pattern comprises keeping the temperature of the surface to be etched lower than the solidification temperature of a phase changing material, ejecting droplets of the phase changing masking material in the liquid form onto the surface to be etched so as to form a predetermined pattern, forming the first masking as the droplets change to solid from liquid after the contact with the surface, removing the material around the first masking by etching the surface, forming the first etched surface, and removing the first masking from the first etched surface.
申请公布号 JP2002348684(A) 申请公布日期 2002.12.04
申请号 JP20020111420 申请日期 2002.04.15
申请人 XEROX CORP 发明人 WONG WILLIAM S;STREET ROBERT A;WHITE STEPHEN D;MATUSIAK ROBERT;APTE RAJ B
分类号 C23F1/00;G03F1/00 主分类号 C23F1/00
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