| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor ion sensor that can be used stably for a long time. SOLUTION: The semiconductor ion sensor is formed by disposing an ion sensitive film 11 on a gate oxide film 4. The ion sensitive film 11 is made up of a matrix resin containing plasticizer and an ion sensitive component. The matrix resin, the primary component of which is ethylene-vinyl acetate copolymer, is employed. |
