FERROELECTRIC MEMORY DEVICE AND ITS MANUFACTURING METHOD, AND HYBRID DEVICE

摘要

A ferroelectric memory device of the present invention includes a memory cell array 100 in which memory cells are arranged in a matrix having first signal electrodes 12, second signal electrodes 16 arranged in a direction intersecting the first signal electrodes 12, and a ferroelectric layer 14 disposed at least in intersection regions between the first signal electrodes 12 and the second signal electrodes 16, and a peripheral circuit section 200 for selectively writing information into or reading information from the memory cell. The memory cell array 100 and the peripheral circuit section 200 are formed in different layers. The peripheral circuit section 200 is formed in a region outside the memory cell array 100.