Chemically amplified resist

摘要

Chemically enhanced resist contains (a) a polymer (I) with carboxylic anhydride and tert.-butyl ester, tert.-butoxycarbonyloxy, tetrahydrofuranyl or tetrahydropyranyl groups, (b) a photo-acid (II), which releases a sulphonic acid (IIA) with a pKa value > 0.5 on exposure to light or electrons, (c) a buffer (III) undergoing a reversible chemical reaction with (IIA) and (d) a solvent (IV).