发明名称 |
Buffer layer for improving control of layer thickness |
摘要 |
<p>A pad layer disposed on a semiconductor substrate 102 and a buffer layer 108 disposed within the pad layer such that the pad layer is divided into a dielectric layer 106 below the buffer layer and a mask layer 110 above the buffer layer. A method of forming layers with uniform planarity and thickness on a semiconductor chip includes the steps of providing a substrate having a thermal pad 106 formed thereon, forming a dielectric layer 106 on the thermal pad, forming a buffer layer 108 on the dielectric layer wherein the buffer layer is made from a different material than the dielectric layer and forming a mask layer 110 on the buffer layer wherein the buffer layer is made from a different material than the mask layer. <IMAGE></p> |
申请公布号 |
EP0908938(B1) |
申请公布日期 |
2002.12.04 |
申请号 |
EP19980307803 |
申请日期 |
1998.09.25 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GRUENING, ULRIKE;BEINTNER, JOCHEN;RADENS, CARL |
分类号 |
H01L21/76;H01L21/308;H01L21/31;H01L21/316;H01L21/318;H01L21/763;H01L21/8242;H01L27/108;(IPC1-7):H01L21/31;H01L21/762 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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