发明名称 Buffer layer for improving control of layer thickness
摘要 <p>A pad layer disposed on a semiconductor substrate 102 and a buffer layer 108 disposed within the pad layer such that the pad layer is divided into a dielectric layer 106 below the buffer layer and a mask layer 110 above the buffer layer. A method of forming layers with uniform planarity and thickness on a semiconductor chip includes the steps of providing a substrate having a thermal pad 106 formed thereon, forming a dielectric layer 106 on the thermal pad, forming a buffer layer 108 on the dielectric layer wherein the buffer layer is made from a different material than the dielectric layer and forming a mask layer 110 on the buffer layer wherein the buffer layer is made from a different material than the mask layer. &lt;IMAGE&gt;</p>
申请公布号 EP0908938(B1) 申请公布日期 2002.12.04
申请号 EP19980307803 申请日期 1998.09.25
申请人 SIEMENS AKTIENGESELLSCHAFT;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 GRUENING, ULRIKE;BEINTNER, JOCHEN;RADENS, CARL
分类号 H01L21/76;H01L21/308;H01L21/31;H01L21/316;H01L21/318;H01L21/763;H01L21/8242;H01L27/108;(IPC1-7):H01L21/31;H01L21/762 主分类号 H01L21/76
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